Mono- and multi high-performance solar silicon wafers. Manufactured to the exact specifications of PV cell and module producers.
Type | N-Type | P-Type |
Dopant | Phosphorus | Gallium |
Dimensions | M10: 182.2*182.2*φ247mm/ 182.2×183.75*247mm/ 182.2×191.6*262.5mm/ M10L:182.2×183.75*256mm G12:210*210*φ295mm G12-R:182*210*φ272mm |
M10:182.2*182.2*φ247mm G12:210*210*φ295mm |
Oxygen Content | ≤12 | ≤16 |
Resistivity | 0.4-1.6<Ω·cm> | 0.4-1.1<Ω·cm> |
Lifetime | ≥800<µs> | ≥70<µs> |
SPECIFICATIONS
Thickness | 90-160µm | Carbon Content | ≤1 |
TTV | ≤25/μm | Bow | ≤40/μm |
Saw Mark | ≤15/μm | Warpage | ≤40/μm |
Cutting Method | DW | Angle between Adjacent Sides/° | 90±0.15° |
Surface Quality | No visual defects (no stains/no finger prints/no oil/no glue ). No color difference No bright line |
Chipping | Depth≤0.3 mm Length ≤0.5 mm Count ≤ 2 /pcs no V-chip |
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