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Silicon Wafters
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Silicon Wafters

Silicon Wafters

Mono- and multi high-performance solar silicon wafers. Manufactured to the exact specifications of PV cell and module producers.

Type N-Type P-Type
Dopant Phosphorus Gallium
Dimensions M10
182.2*182.2*φ247mm/
182.2×183.75*247mm/
182.2×191.6*262.5mm/
M10L:182.2×183.75*256mm
G12:210*210*φ295mm
G12-R:182*210*φ272mm

M10:182.2*182.2*φ247mm
G12:210*210*φ295mm
Oxygen Content ≤12 ≤16
Resistivity 0.4-1.6<Ω·cm> 0.4-1.1<Ω·cm>
Lifetime ≥800<µs> ≥70<µs>

 

SPECIFICATIONS

Thickness 90-160µm Carbon Content ≤1
TTV ≤25/μm Bow ≤40/μm
Saw Mark ≤15/μm Warpage ≤40/μm
Cutting Method DW Angle between Adjacent Sides/°  90±0.15°
Surface Quality No visual defects (no stains/no finger prints/no oil/no glue ).
No color difference
No bright line
Chipping Depth≤0.3 mm
Length ≤0.5 mm
Count ≤ 2 /pcs
no V-chip
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Contact Email:sales@chinacnd.com
Company Address:19F, C&D International Building, No.1699 Huandao East Road, Siming District, Xiamen City, Fujian Province, China
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